Reverse Epitaxy of Ge: Ordered and Faceted Surface Patterns

Surface studies of phase formation in Co–Ge system: Reactive deposition epitaxy versus solid-phase epitaxy

Morphological evolution of cobalt germanide epilayers, CoxGey, was investigated in situ by scanning tunneling microscopy and spectroscopy and reflection high-energy electron diffraction, as a function of deposition method and, hence, the phase content of the epilayer. During reactive deposition epitaxy, in which Co atoms were evaporated onto a flat pseudomorphic Ge/Si(001) wetting layer at 773 ...

Sn-mediated Ge/Ge„001... growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness

Fully strained single-crystal metastable Ge1−xSnx layers were grown on Ges001d in order to probe the role of Sn dopant and alloy concentrations sCSn=1310 cm−3 to 6.1 at. % d on surface roughening pathways leading to epitaxial breakdown during low-temperature s155 °Cd molecular-beam epitaxy of compressively strained films. The addition of Sn was found to mediate Ges001d surface morphological evo...

Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial het...

Reverse Mathematics and Ordered Groups

Ferromagnetism of Mn/Ge Multilayers Grown by Molecular Beam Epitaxy

We report on novel ferromagnetic Mn/Ge multilayers for spintronics applications investigated both experimentally and theoretically. Two Mn/Ge multilayers are grown on GaAs (001) substrates by molecular beam epitaxy. The period of each multilayer consists of an Mn layer of varying thickness (0.6 and 5 Å) and a 10 Å thick Ge spacer layer. From temperaturedependent magnetization and hysteresis loo...